GTRA360502M-V1-R3K

射频结栅场效应晶体管(RF JFET)晶体管 50W, GaN HEMT, 48V, 3400-3800MHz, 248 PP

GTRB224402FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 400W, 48V, 2110-2200 MHz GaN-SiC HEMT

GTRB186002FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 500W, 48V, 1805-1880 MHz GaN-SiC HEMT

GTRA260502M-V1-R3K

射频结栅场效应晶体管(RF JFET)晶体管 50W, GaN HEMT, 48V, 2515-2675MHz, 248 PP

GTVA101K42EV-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 GTVA101K42EV-V1-R0

GTVA107001FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 700W, GaN HEMT, 50V, 0.9-1.2GHz, IM FET, Pill

CGH40045P

射频结栅场效应晶体管(RF JFET)晶体管 45W, 4.0GHz, 830121P, GaN HEMT, PILL

CGHV40050P

射频结栅场效应晶体管(RF JFET)晶体管 50W, GaN HEMT, DC-6.0GHz, 50V, UNMATCHED

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk