GTRB097152FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 900W,48V,758-960MHz,GaN HEMT (250pcs)

GTRB267008FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管

GTRB246608FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 500W, 2300-2400MHz, 48V GaN HEMT (250pcs)

CGHV96050F2

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 7.9-9.6GHz, 50 Watt 关于MACOM gan hemts 的信息

CG2H40035P

射频结栅场效应晶体管(RF JFET)晶体管 35W, GaN HEMT, 28V, DC-4.0GHz, Pill, Gen2

GTRB226002FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 450W, 48V, 2110-2200 MHz GaN-SiC HEMT

LTN/GTVA262701FA-V2

射频结栅场效应晶体管(RF JFET)晶体管 Amplifier, 2620-2690MHz, GTVA262701FA-V2 GaN HEMT is included

GTRB264318FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 400W, GaN HEMT, 48V, 2496-2690MHz, 248 PP

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk