PTVA123501FC-V1-R250

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET

GTRB186002FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 500W, 48V, 1805-1880 MHz GaN-SiC HEMT

MA46481-134

变容二极管 Diode,Varactor,GaAs chip 1.25

CGB9P-SIDE

射频结栅场效应晶体管(RF JFET)晶体管 Gate Biasing Assembly, GaN, 9-Pins, Side Pins Gate Control

GTRB206002FC/1-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 500W, 48V, 1930-2020 MHz GaN-SiC HEMT (250 pcs Reel)

PTRA087008NB-V1-R2

射频金属氧化物半导体场效应(RF MOSFET)晶体管 700W, Si LDMOS, 48V, 790-820MHz, TO275

PTFB241402FC-V1-R0

射频金属氧化物半导体场效应(RF MOSFET)晶体管 140W, Si LDMOS, 28V, 2300-2400MHz, 248 PP

PTGA090304MD-V1-R5

射频金属氧化物半导体场效应(RF MOSFET)晶体管 30W, Si LDMOS IC , 50V, 575-960MHz, TO270

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk