CGH35240F

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 3.1-3.5GHz, 240 Watt

GTRB266502FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 630W,48V,2620-2690MHz,GaN HEMT (250pcs)

PXAE261908NF-V1-R5

射频金属氧化物半导体场效应(RF MOSFET)晶体管 240W, SiLDMOS, 28V, 2615-2515-2675 MHz

GTRB266502FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 630W,48V,2620-2690MHz,GaN HEMT (50pcs)

GTRB266908FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 630W, GaN HEMT, 48V, 2515-2675 MHz

GTRB267008FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管

CGHV59350P

射频结栅场效应晶体管(RF JFET)晶体管 350W, GaN HEMT, 50V, 5.2-5.9GHz, PULSED,

GTRA384802FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 480W GaN HEMT 48V 3800MHz

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk