CGB5P-CEN

射频结栅场效应晶体管(RF JFET)晶体管 Gate Biasing Assembly, GaN, 5-Pins, Center Pin Gate Control

LTA/PTRA095908NB-V1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Amplifier, 925-960MHz, PTRA095908NB-V1 LDMOS FET included

PTVA035002EV-V1-R0

射频金属氧化物半导体场效应(RF MOSFET)晶体管 500W, Si LDMOS, 50V, 390-450MHz, Flange

PXFE211507FC-V1-R0

射频金属氧化物半导体场效应(RF MOSFET)晶体管 150W, Si LDMOS, 28V, 2110-2170MHz, 248 SE

CG2H80120D-GP4

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Bare Die 28V DC-8.0GHz 120W

CG2H80060D-GP4

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-8.0GHz, 60 Watt

CGHV40320D-GP4

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-4.0GHz, 320 Watt 关于MACOM gan hemts 的信息

PXFE181507FC-V1-R0

射频金属氧化物半导体场效应(RF MOSFET)晶体管 150W, Si LDMOS, 28V, 1805-1880MHz, 248 SE

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk