CGH60060D-GP4

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT Die DC-6.0GHz, 60 Watt 关于MACOM gan hemts 的信息

CGH31240F

射频结栅场效应晶体管(RF JFET)晶体管 240W, 3.1GHz, 830163F, GaN HEMT, 28V, FL

CGHV96100F2

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 7.9-9.6GHz, 100 Watt 关于MACOM gan hemts 的信息

CGHV59070F

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 4.4-5.9GHz, 70 Watt 关于MACOM cghv59070 gan hemt 的信息

LTA/PTRA084858NF-V1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Amplifier, 730-960MHz, PTRA084858NB-V1 LDMOS FET included

LTA/PXAE261908NF-V1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Amplifier Doherty, 2615-2675 MHz, PXAE261908NF LDMOS FET included

PTVA102001EA-V1-R2

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET

PXAC210552FC-V1-R2

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk