PTRA087008NB-V1-R5

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power Amplifier

CGHV14250P

射频结栅场效应晶体管(RF JFET)晶体管 250W, GaN HEMT, 50V, 0.5-1.8GHz, IM FET, Pill

CG2H40010F

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-8.0GHz, 10 Watt 关于MACOM cgh2400 cgh300 hemt 的信息

GTVA220701FA-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 RF LDMOS FET

CGH21240F

射频结栅场效应晶体管(RF JFET)晶体管 Amplifier,240W,PULSED,2.1GHz,830140F,GaN

CGHV40180P

射频结栅场效应晶体管(RF JFET)晶体管 200W, 0.05-1.0GHz, 830292P, GaN HEMT, 50

CGHV35120F

射频结栅场效应晶体管(RF JFET)晶体管 Amplifier,GaN,120W,3.1-3.5GHz,G50V3,50V

PXAE263708NB-V1-R0

射频金属氧化物半导体场效应(RF MOSFET)晶体管 370W Si LDMOS 28V 2496 to 2690MHz 关于MACOM 5g rf transistors 的信息

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk