GTRB266908FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 630W, GaN HEMT, 48V, 2515-2675 MHz

LTA/PTRA093818NF-V1

射频金属氧化物半导体场效应(RF MOSFET)晶体管 LTA/PTRA093818NF-V1

GTRB184402FC-V1-R2

射频结栅场效应晶体管(RF JFET)晶体管 480W, 48V, 1805-1880 MHz GaN-SiC HEMT

PTNC210604MD-V2-R5

射频金属氧化物半导体场效应(RF MOSFET)晶体管 60W, Si LDMOS IC , 28V, 1800-2100MHz, TO270

MA40207-120

肖特基二极管与整流器 Diode,Schottky,Hi-Rel,Ceramic,Si

CGHV1420KF

射频结栅场效应晶体管(RF JFET)晶体管 2500W, GaN HEMT, 65V, DC-1.215GHz, IM FET, Flange

GTRB246608FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 500W, 2300-2400MHz, 48V GaN HEMT (50pcs)

MSH600-75

肖特基二极管与整流器 Schottky Diode,Axial Leaded,CS75

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk