CG2H40025P

射频结栅场效应晶体管(RF JFET)晶体管 25W, 4.0GHz, GaN HEMT G28V4 (CG2H40025P)

CGHV14250F

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT 1.2-1.4GHz, 250 Watt 关于MACOM gan hemts 的信息

GTVA263202FC-V1-R0

射频结栅场效应晶体管(RF JFET)晶体管 RF LDMOS FET

PXAE183708NB-V1-R2

射频金属氧化物半导体场效应(RF MOSFET)晶体管 320W, Si LDMOS, 28V, 1805-1880MHz,

PTRA082808NF-V1-R5

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Power Amplifier

PTFB201402FC-V2-R0

射频金属氧化物半导体场效应(RF MOSFET)晶体管 RF LDMOS FET

CGH40090PP

射频结栅场效应晶体管(RF JFET)晶体管 GaN HEMT DC-2.5GHz, 90 Watt 关于MACOM gan hemts 的信息

CGHV40030P

射频结栅场效应晶体管(RF JFET)晶体管 30W, GaN HEMT, DC-4.0GHz, 50V, 830238P,

MAAD-000523-TR1000

6Bit 0.5dBStep 31.5dB 6GHz 24-Pin PQFN EP T/R

CSFD25

Low Cost Frequency Doubler

MA4E2200B1-287T

Diode RF Schottky 1.5V 3-Pin SOT-23 T/R

MAMF-011180-TR1000

M/A-COM Technology Solutions High Power Switch with Integrated Bias Controller 0.5 - 7.2 GHz

NPTB00004A

HEMT N-CH 28V 5W DC-6GHz 8SOIC

MAVR-000409-0287AT

Diode VAR Cap Single 30V 42.3pF 3-Pin SOT-23 T/R

MAATCC0009

6Bit 0.5dBStep 31.5dB 4GHz 32-Pin PQFN EP Bulk